Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 863-865

  Ko, Jack ^b   Hegblom, Eric R ^b   Akulova, Yuliya ^b   Thibeault, Brian J ^b   Coldren, Larry A ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

Molecular beam epitaxy; Oxide aperture; Rapid thermal annealing; Semiconductor lasers; Strained active layer; Vertical cavity

Indexed keywords

ANNEALING; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

STRAINED ACTIVE LAYERS; VERTICAL CAVITY LASERS (VCL);

SEMICONDUCTOR LASERS;

EID: 0031188715     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593324     Document Type: Article

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