Compressively-strained InGaAsP-active (λ=0.85μm) VCSELs

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2000, Pages 724-725

  Tansu, Nelson ^a   Mawst, Luke J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

COMPRESSIVE STRAIN; EDGE EMITTING LASERS; INDIUM GALLIUM ARSENIDE PHOSPHIDE; STRAIN COMPENSATION; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0034482086     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)