850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 942-944

  Tadanaga, Osamu ^a   Tateno, Kouta ^a   Uenohara, Hiroyuki ^a   Kagawa, Toshiaki ^a   Amano, Chikara ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPRESSIVE STRESS; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SUBSTRATES;

GALLIUM ARSENIDE SUBSTRATE; INDIUM ALUMINUM GALLIUM ARSENIDE; OPTICAL GAIN; ORTHOGONAL POLARIZATION SUPPRESSION RATIO; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0343878185     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867968     Document Type: Article

References (10)

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