Evidences of F-induced nanobubbles as sink for self-interstitials in Si

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Boninelli, S ^a,b   Claverie, A ^a   Impellizzeri, G ^b   Mirabella, S ^b   Priolo, F ^b   Napolitani, E ^c   Cristiano, F ^d  

^a CEMES CNRS   (France)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FLUORINE; ION IMPLANTATION; POINT DEFECTS; SILICON; STOICHIOMETRY;

NANOBUBBLES; POINT DEFECTS ENGINEERING; SOLID PHASE EPITAXY (SPE);

NANOSTRUCTURED MATERIALS;

EID: 33750460908     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364271     Document Type: Article

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