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Volumn 76, Issue 9, 1996, Pages 1493-1496

Trap-limited migration of si self-interstitials at room temperature

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3342928693     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.1493     Document Type: Article
Times cited : (69)

References (22)
  • 10
    • 85035221856 scopus 로고
    • Defects and Radiation Effects in Semiconductors—1978
    • J. H. Albany, Institute of Physics, Bristol
    • S. Mottet and A. Roizés, in Defects and Radiation Effects in Semiconductors—1978, J. H. Albany, IOP Conference Proceedings No. 46 (Institute of Physics, Bristol, 1979).
    • (1979) IOP Conference Proceedings No. 46
    • Mottet, S.1    Roizés, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.