SCOPUS 정보 검색 플랫폼

Volumn 26, Issue , 2003, Pages 78-85

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

(11) Chang, K a Shanmugasundaram, K a Lee, D O b Roman, P b Shallenberger, J a Chang, F M a Wang, J a Mumbauer, P b Grant, R b Beck, R c Ruzyllo, J a

a The Pennsylvania State University (United States)

b Primaxx Inc (United States)

c WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED CIRCUITS; DIELECTRIC MATERIALS; HAFNIUM; HEAT TREATMENT; SILICON; STOICHIOMETRY; SUBSTRATES; SURFACE TREATMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EQUIVALENT OXIDE THICKNESS (EOT); INTERFACIAL OXIDES; MOS GATE STACKS; SILICON SURFACE TREATMENTS;

MOS DEVICES;

EID: 3042832346 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

References (7)

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