How to make GaMnAs with a high ferromagnetic phase transition temperature?

Materials Science- Poland

Volumn 24, Issue 3, 2006, Pages 617-625

  Sadowski, J ^a,b   Domagala J Z ^a   Kanski, J ^c   Rodriguez, C H ^d   Terki, F ^d   Charar, S ^d   Maude, D ^e  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d UNIVERSITÉ MONTPELLIER 2   (France)

^e CNRS   (France)

Author keywords

Defect, annealing; Ferromagnetic semiconductor; Molecular beam epitaxy

Indexed keywords

CURIE TEMPERATURES; FERROMAGNETIC SEMICONDUCTORS; POST-GROWTH ANNEALING; SMOOTH SURFACES;

CHEMICAL MODIFICATION; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; PHASE TRANSITIONS; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSPORT PROPERTIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33749598672     PISSN: 01371339     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (28)

1. FLATTÉ M.E., VIGNALE G., Appl. Phys. Lett., 78 (2001), 1273.
2. MATTANA R., ELSEN M., GEORGE J.-M., JAFFRÈS H., NGUYEN VAN DAU F., PERT A., WYCZISK M.F., OLIVIER J., GALTIER P., LÉPINE B., GUIVARC' H A., JÉZÉQUELG., Phys. Rev. B, 71 (2005), 075206.
3. OHNO H., SHEN A., MATSUKURA F., OIWA A., ENDO A., KATSUMOTO S., IYE Y., Appl. Phys. Lett., 69 (1996), 363.
4. TANG H.X., KAWAKAMI R.K., AWSCHALOM D.D., ROUKES M.L., Phys. Rev. Lett., 90 (2003), 107201.
5. CHIBA D., SATO Y., KITA T., MATSUKURA F., OHNO H., Phys. Rev. Lett., 93 (2004), 216602.
6. SAWICKI M., WANG K.-Y., EDMONDS K.W., CAMPION R.P., STADDON C.R., PARLEY N.R.S., FOXON C.T., PAPIS E., KAMINSKA E., PIOTROWSKA A., DIETL T., GALLAGHER B.L., Phys. Rev. B, 71 (2005), 121302.
7. DIETLT., OHNO H., MATSUKURA P., Phys. Rev. B, 63 (2001), 195205.
8. DIETL T., Semicond. Sci. Technol., 17 (2002), 377.
9. NAZMUL A.M., AMEMIYA T., SHUTO Y., SUGAHARA S., TANAKA M., Phys. Rev. Lett., 95 (2005), 017201.
10. MASEK J., MACA F., Acta Phys. Polon. A, 100 (2001), 319.
11. BLINOWSKI J., KACMAN P., Phys. Rev. B, 67 (2003), 121204.
12. EDMONDS K.W., BOGUSLAWSKI P., WANG K.Y., CAMPION R.P., NOVIKOV S.N., PARLEY N.R.S., GALLAGHER B.L., FOXON C.T., SAWICKI M., DIETL T., BUONGIORNO NARDELLI M., BERNHOLC J., Phys. Rev. Lett., 92 (2004), 037201.
13. CHIBA D., TAKAMURA K., MATSUKURA F., OHNO H., Appl. Phys. Lett., 82 (2003), 3020.
14. KU K.C., POTASHNIK S.J., WANG R.F., CHUN S.H., SCHIFFER P., SAMARTH N., SEONG M.J., MASCARENHAS A., JOHNSTON-HALPERIN E., MYERS R.C., GOSSARD A.C., AWSCHALOM D.D., Appl. Phys. Lett., 82 (2003), 2302.
15. KIRBY B.J., BORCHERS J.A., RHYNE J.J., TE VELTHUIS S.G.E., HOFFMANN A., O'DONOVAN K.V., WOJTOWICZ T., LIU X., LIM W.L., FURDYNA J.K., Phys. Rev. B, 69 (2004), 081307.
16. OHNO H., Science, 281 (1998), 951.
17. SADOWSKI J., DOMAGALA J.Z., BAK-MISIUK J., KOLESNIK S., SAWICKI M., SWIATEK K., KANSKI J., ILVER L., STRÖM V., J. Vac. Sci. Technol. B, 18 (2000), 1697.
18. LIU X., PRASAD A., NISHIO J., WEBER E.R., LILIENTAL-WEBER Z., WALUKIEWICZ W., Appl. Phys. Lett., 67 (1995), 279.
19. SADOWSKI J., MATHIEU R., SVEDLINDH P., DOMAGALA J.Z., BAK-MISIUK J., SWIATEK K., KARLSTEEN M., KANSKI J., ILVER L., ÅSKLUNDH., SÖDERVALL U., Appl. Phys. Lett., 78 (2001), 3271.
20. STAAB T.E.M., NIEMINEN R.M., GEBAUER J., KRAUSE-REHBERG R., LUYSBERG M., HAUGK, M., FRAUENHEIM TH., Phys. Rev. Lett., 87 (2001), 045504.
21. YU K.M., WALUKIEWICZ W., WOJTOWICZ T., KURYLISZYN I., LIU X., SASAKI Y., FURDYNA J.K., Phys. Rev. B, 65 (2002), 201303.
22. WOLOS A., KAMINSKA M., PALCZEWSKA M., TWARDOWSKI A., LIU X., WOJTOWICZ T., FURDYNA J.K., J. Appl. Phys. 96, 530 (2004).
23. SADOWSKI J., DOMAGALA J.Z., Phys. Rev. B, 69 (2004), 075206.
24. ADELL M., ILVER L., KANSKI J., STANCIU V., SVEDLINDH P., SADOWSKI J., DOMAGALA J.Z., TERKI F., HERNANDEZ C., CHARAR S., Appl. Phys. Lett., 86 (2005), 112501.
25. STONE M.B., KU K.C., POTASHNIK S.J., SHEU B.L., SAMARTH N., SCHIFFER P., Appl. Phys. Lett., 83 (2003), 4568
26. KIRBY B.J., BORCHERS J.A., RHYNE J.J., O'DONOVAN K.V., WOJTOWICZ T., LIU X., GE Z., SHEN S., FURDYNA J.K., Appl. Phys. Lett., 86 (2005), 072506.
27. MALFAIT M., VANACKEN J., MOSHCHALKOV V.V., VAN ROY W., BORGHS G. Appl. Phys. Lett., 86 (2005), 132501.
28. MAKSIMOV O., SHEU B.L., XIANG G., KEIM N., SCHIFFER P., SAMARTH N., J. Crystal Growth, 269 (2004), 298.