Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1697-1700

  Sadowski, J ^a,b   Domagala J Z ^b   Bak Misiuk J ^b   Kolesnik S ^b   Sawicki, M ^b   Swiatek K ^b   Kanski, J ^c   Ilver, L ^c   Strom V ^d  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUTE OF PHYSICS   (Poland)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

MANGANESE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH;

GALLIUM MANGANESE ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0342472267     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591455     Document Type: Article

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