Postgrowth annealing of (Ga,Mn) as under as capping: An alternative way to increase TC

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Adell, M ^a,b   Iiver, L ^a,b   Kanski, J ^a,b   Stanciu, V ^c   Svedlindh, P ^c   Sadowski, J ^d   Domagala, J Z ^d   Terki, F ^e   Hernandez, C ^e   Charar, S ^e  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

^d INSTITUTE OF PHYSICS   (Poland)

^e UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; MAGNETIC PROPERTIES; OXIDATION; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR MATERIALS; TEMPERATURE MEASUREMENT;

CAPPING; EFFUSION CELLS; MAGNETIC PHASES; POSTGROWTH ANNEALING;

ARSENIC;

EID: 18044365211     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1875746     Document Type: Article

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