Annealing-dependent magnetic depth profile in Ga1-xMnx As

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 8, 2004, Pages

  Kirby, B J ^a   Borchers, J A ^b   Rhyne, J J ^a,c   Te Velthuis, S G E ^d   Hoffmann, A ^d   O'donovan K V ^b,e   Wojtowicz, T ^f,g   Liu, X ^f   Lim, W L ^f   Furdyna, J K ^f  

^a UNIVERSITY OF MISSOURI   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF MARYLAND   (United States)

^f UNIVERSITY OF NOTRE DAME   (United States)

^g INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; MANGANESE;

ARTICLE; MAGNETISM; MATHEMATICAL ANALYSIS; NEUTRON DIFFRACTION; REFLECTOMETRY; TEMPERATURE DEPENDENCE;

EID: 4444271841     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.081307     Document Type: Article

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