High temperature ferromagnetism in GaAs-based heterostructures with Mn δ doping

Physical Review Letters

Volumn 95, Issue 1, 2005, Pages

  Nazmul, A M ^a,b   Amemiya, T ^a   Shuto, Y ^a   Sugahara, S ^a   Tanaka, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC TRANSITION TEMPERATURES; HOLE GAS WAVE FUNCTION; MN ATOMS; P-TYPE ALGAAS LAYERS;

ANNEALING; DOPING (ADDITIVES); FERROMAGNETISM; HALL EFFECT; MAGNETIC MOMENTS; MANGANESE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUPERCONDUCTING TRANSITION TEMPERATURE;

HETEROJUNCTIONS;

EID: 27144498887     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.017201     Document Type: Article

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