Enhancement of Curie temperature in Ga1-xMnxAs epilayers grown on cross-hatched InyGa1-yAs buffer layers

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 298-303

  Maksimov, O ^a   Sheu, B L ^a   Xiang, G ^a   Keim, N ^a   Schiffer, P ^a   Samarth, N ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. GaMnAs; B2. Ferromagnetic semiconductors

Indexed keywords

BUFFER LAYERS; CROSS-HATCHING; CURIE TEMPERATURE; EPILAYERS;

ANNEALING; EPITAXIAL GROWTH; HETEROJUNCTIONS; MAGNETOMETERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SQUIDS; SUBSTRATES;

SEMICONDUCTING GALLIUM;

EID: 4344680589     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.091     Document Type: Article

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