Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

Applied Physics Letters

Volumn 82, Issue 14, 2003, Pages 2302-2304

  Ku, K C ^a   Potashnik, S J ^a   Wang, R F ^a   Chun, S H ^a,d   Schiffer, P ^a   Samarth, N ^a   Seong, M J ^b   Mascarenhas, A ^b   Johnston Halperin, E ^c   Myers, R C ^c   Gossard, A C ^c   Awschalom, D D ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; MAGNETIZATION; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

CURIE TEMPERATURE;

FERROMAGNETIC MATERIALS;

EID: 0037425196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564285     Document Type: Article

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