Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4568-4570

  Stone, M B ^a   Ku, K C ^a   Potashnik, S J ^a   Sheu, B L ^a   Samarth, N ^a   Schiffer, P ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETOMETERS; MONOLAYERS; SEMICONDUCTING GALLIUM COMPOUNDS;

FERROMAGNETIC PROPERTIES; FERROMAGNETIC SEMICONDUCTORS; LOW TEMPERATURE ANNEALING;

MAGNETIC SEMICONDUCTORS;

EID: 0346846591     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629376     Document Type: Article

References (33)

1. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchekanova, and D. M. Treger, Science 294, 1488 (2001).
2. H. Ohno, in Semiconductor Spintronics and Quantum Computation, edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer, Berlin, 2002)
3. H. Ohno, and F. Matsukura, Solid State Commun. 117, 179 (2001), and references therein.
4. N. Samarth, S. H. Chun, K. C. Ku, S. J. Potashnik, and P. Schiffer, Solid State Commun. 127, 173 (2003), and references therein.
5. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69, 363 (1996).
6. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, Phys. Rev. B 57 R2037 (1998).
7. S. J. Potashnik, K. C. Ku, S. H. Chun, J. J. Berry, N. Samarth, and P. Schiffer, Appl. Phys. Lett. 79, 1495 (2001).
8. S. J. Potashnik, K. C. Ku, R. Mahendiran, S. H. Chun, R. F. Wang, N. Samarth, and P. Schiffer, Phys. Rev. B 66, 012408 (2002).
9. A. M. Nazmul, S. Sugahara, and M. Tanaka, Phys. Rev. B 67, 241308 (2003).
10. K. W. Edmonds, K. Y. Wang, R. P. Campion, A. C. Neumann, N. R. S. Farley, B. L. Gallagher, and C. T. Foxon, Appl. Phys. Lett. 81, 4991 (2002).
11. K. C. Ku, S. J. Potashnik, R. Wang, S. H. Chun, P. Schiffer, N. Samarth, M. J. Seong, A. Mascarenhas, E. Johnston-Halperin, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Appl. Phys. Lett. 82, 2302 (2003).
12. D. Chiba, K. Takamura, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 82 3020 (2003).
13. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
14. T. Jungwirth, J. König, J. Sinova, J. Kuera, and A. H. MacDonald, Phys. Rev. B 66, 012402 (2002)
15. J. Schliemann and A. H. MacDonald, Phys. Rev. Lett. 88, 137201 (2002), and references therein.
16. G. Alvarez, M. Mayr, and E. Dagotto, Phys. Rev. Lett. 89, 277201 (2002).
17. A. Kaminski and S. Das Sarma, Phys. Rev. Lett. 88, 247202 (2002).
18. S. Sanvito and N. A. Hill, Appl. Phys. Lett. 78, 3493 (2001).
19. M. Berciu and R. N. Bhatt, Phys. Rev. Lett. 87, 107203 (2001).
20. E. J. Singley, R. K. Kawakami, D. D. Awschalom, and D. Basov, Phys. Rev. Lett. 89, 097203 (2002).
21. K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kurliszyn, X. Liu, Y. Sasaki, and J. K. Furdyna, Phys. Rev. B 65, 201303(R) (2002).
22. U. Welp, V. K. Vlasko-Vlasov, X. Liu, J. K. Furdyna, and T. Wojtowicz, Phys. Rev. Lett. 90, 167206 (2003).
23. M. Sawicki, F. Matsukura, A. Idziaszek, T. Dietl, G. M. Schott, C. Ruester, G. Karczewski, G. Schmidt, and L. W. Molenkamp, cond-mat/0212511.
24. J. Blinowski and P. Kacman, Phys. Rev. B 67, 121204 (2003).
25. T. Hayashi, Y. Hashimoto, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 78, 1691 (2001).
26. C with orientation, and the low-temperature (T < 10 K) magnetization varied only ~ 10% for different in-plane orientations.
27. M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, and A. Mascarenhas, Phys. Rev. B 66, 033202 (2002).
28. We show data from the 50-nm-thick epilayers since they could be examined by more techniques (e.g., EPMA); the behaviour of the 15-nm-thick epilayers was consistent with the behavior shown, except where noted otherwise.
29. The low-temperature magnetization is approximately independent of thickness t for the 15-nm-thick as-grown samples.
30. K. W. Edmonds, P. Boguslawski, B. L. Gallagher, R. P. Champion, K. Y. Wang, N. R. S. Farley, C. T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc, cond-mat/0307141 (unpublished).
31. B. Sorensen, J. Sadowski, R. Mathieu, P. Svedlindh, and P. E. Lidelof, Appl. Phys. Lett. 82, 2287 (2003)
32. B. S. Sorensen, J. Sadowski, S. E. Andresen, and P. E. Lindelof, Phys. Rev. B 66, 233313 (2002).
33. W. Limmer, A. Koeder, S. Frank, M. Glunk, W. Schoch, V. Avrutin, K. Zuern, R. Sauer, and A. Waag, cond-mat/0307102 (unpublished).