Giant planar hall effect in epitaxial (Ga, Mn)As devices

Physical Review Letters

Volumn 90, Issue 10, 2003, Pages

  Tang, H X ^a   Kawakami, R K ^b   Awschalom, D D ^b   Roukes, M L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETIZATION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS;

GIANT PLANAR HALL EFFECT; METALLIC FERROMAGNETS; MICRODEVICES;

THIN FILM DEVICES;

EID: 0037627691     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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