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Applied Physics A: Materials Science and Processing

Volumn 62, Issue 4, 1996, Pages 345-353

On the recombination behaviour of iron in moderately boron-doped p-type silicon

(3) Walz, D a Joly, J P a Kamarinos, G b

a CEA GRENOBLE (France)

b Grenoble INP Phelma (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; DEFECTS; ELECTRIC FIELDS; LASER BEAMS; NUMERICAL ANALYSIS; NUMERICAL METHODS; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DEMBER ELECTRIC FIELD; DIFFUSION LENGTH; ELYMAT TECHNIQUE; RECOMBINATION LIFETIME; SURFACE PHOTOVOLTAGE TECHNIQUE;

IRON;

EID: 0030128801 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/BF01594232 Document Type: Article

Times cited : (28)

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