A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 301-308

  Moon, Y T ^a   Xie, J ^a   Liu, C ^a   Fu, Y ^a   Ni, X ^a   Biyikli, N ^a   Zhu, K ^a   Yun, F ^a   Morkoc H ^a   Sagar, A ^b   Feenstra, R M ^b  

^a Virginia Commonwealth University   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A1. Morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY DIFFRACTION;

EPILAYERS; GAN SEED LAYERS; SIXNY; THERMALLY ACTIVATED;

GALLIUM NITRIDE;

EID: 33749422287     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.010     Document Type: Article

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