Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

Journal of Electronic Materials

Volumn 35, Issue 9, 2006, Pages 1708-1711

  Lin, You Da ^a   Wu, Yewchung Sermon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon; Nickel oxide; Nickel induced lateral crystallization (NILC); Oxygen; Polycrystalline silicon

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; NUCLEATION; OXYGEN; POLYSILICON; THERMAL EFFECTS; THIN FILMS;

GROWTH RATE; INCUBATION PERIOD; NICKEL INDUCED LATERAL CRYSTALLIZATION (NILC); NICKEL OXIDES;

NICKEL COMPOUNDS;

EID: 33749365268     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0222-x     Document Type: Article

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