Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 3099-3101

  Jang, Jin ^a   Park, Seong Jin ^a   Kim, Kyung ho ^a   Cho, Bong Rae ^a   Kwak, Won Kyu ^a   Yoon, Soo Young ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTALLITES; ELECTRIC FIELDS; NICKEL COMPOUNDS; POLYCRYSTALLINE MATERIALS; SILICIDES; THIN FILM TRANSISTORS;

AMORPHOUS SILICON (A-SI); AREA DENSITY; BULK DENSITY; FIELD-EFFECT MOBILITIES; FILM SURFACES; NI SILICIDE; SI MATRIX;

AMORPHOUS SILICON;

EID: 0001405518     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1286064     Document Type: Letter

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