Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1556-1559

  Chao, Chi Wei ^a   Wu, Yew Chung Sermon ^a   Hu, Gau Ren ^a   Feng, Ming Shian ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electroless plating and physical vapor deposition; Metal induced lateral crystallization; Solid phase crystallization; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTROLESS PLATING; MORPHOLOGY; NICKEL; PHYSICAL VAPOR DEPOSITION; POLYSILICON;

METAL-INDUCED LATERAL CRYSTALLIZATION; SOLID PHASE CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0037932022     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1556     Document Type: Article

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