Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1236-1241

  Ma, Tianfu ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON FILM; CRYSTAL MORPHOLOGIES; DOPANT DEPENDENCE; FILM MORPHOLOGY; HEAVY DOPING; METAL-INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED LATERALLY CRYSTALLIZED; NICKEL SILICIDE; THICKNESS DEPENDENCE;

AMORPHOUS SILICON; ARSENIC; BORON; ION IMPLANTATION; METALLIC FILMS; PHOSPHORUS; POLYSILICON; SILICIDES;

SEMICONDUCTOR DOPING;

EID: 0036469346     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430531     Document Type: Article

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