Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1104-1106

  Gu, Jian ^a   Chou, Stephen Y ^a   Yao, Nan ^a   Zandbergen, Henny ^a   Farrer, Jeffrey K ^b  

^a Princeton University   (United States)

^b EDAX TSL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON FILM; AMORPHOUS SUBSTRATE; CRYSTALLIZATION PROCESS; IN-SITU TRANSMISSION; LOW TEMPERATURES; MULTIPLE GRAINS; NANO SCALE; NANOPATTERNING; NARROW-LINE WIDTH; SILICONDIOXIDE SUBSTRATES; SINGLE CRYSTAL SILICON; SINGLE-CRYSTAL SI;

AMORPHOUS FILMS; MONOCRYSTALLINE SILICON; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 79955995368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498146     Document Type: Article

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