Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 803-805

  Kim, Hansuk ^a   Couillard, J Greg ^a   Ast, Dieter G ^a  

^a Department of Materials Science and Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001520955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120898     Document Type: Article

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