SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2679-2684

Influences of residual chlorine in CVD-TiN gate electrode on the gate oxide reliability in multiple-thickness oxide technology

(2) Moriwaki, M a Yamada, T a

a PANASONIC CORPORATION (Japan)

Author keywords

Cl; CVD; Gate oxide reliability; Metal gate; TiN

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CHLORINE; DEGRADATION; DESORPTION; DIFFUSION; ELECTRODES; MOS CAPACITORS; OXIDES; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

MULTIPLE-THICKNESS OXIDE TECHNOLOGY; THERMAL DESORPTION SPECTROSCOPY (TDS);

GATES (TRANSISTOR);

EID: 0035300706 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2679 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.