Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Barabash, R I ^a,b   Roder, C ^c   Ice, G E ^a   Einfeldt, S ^c,d   Budai, J D ^a   Barabash, O M ^a   Figge, S ^c   Hommel, D ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

^d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC TILTS; GROWTH CONDITIONS; MASKLESS CANTILEVER EPITAXY; SIDEWALL DEPOSITION;

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE;

THIN FILMS;

EID: 33748848088     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234807     Document Type: Article

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