White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 732-738

  Barabash, R I ^a   Ice, G E ^a   Liu, W ^a   Einfeldt, S ^b   Hommel, D ^b   Roskowski, A M ^c   Davis, R F ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF BREMEN   (Germany)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN LAYERS; ROOM TEMPERATURES; X-RAY MICROBEAM ANALYSIS;

EPITAXIAL GROWTH; FINITE ELEMENT METHOD; STRAIN MEASUREMENT; TEMPERATURE DISTRIBUTION; X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

EID: 25444488980     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461364     Document Type: Conference Paper

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