Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Barabash, R I ^a   Ice, G E ^a   Liu, W ^a   Einfeldt, S ^b   Roskowski, A M ^c   Davis, R F ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF BREMEN   (Germany)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC TILT; DIFFRACTION PATTERNS; DISLOCATION DENSITY; X-RAY MICRODIFFRACTION;

CHARGE COUPLED DEVICES; COMPUTER SIMULATION; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); ELASTIC MODULI; FILM GROWTH; FINITE ELEMENT METHOD; METALLORGANIC VAPOR PHASE EPITAXY; SILICON CARBIDE; THERMAL EXPANSION; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 19944432038     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1825614     Document Type: Article

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