Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Huang, X R ^a   Bai, J ^a   Dudley, M ^a   Dupuis, R D ^b   Chowdhury, U ^b  

^a Stony Brook University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL TILTING; GAN FILMS; SUBSTRATE SURFACE MORPHOLOGY; VICINAL SURFACES;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GROWTH (MATERIALS); SAPPHIRE; SURFACES; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 20844452030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1940123     Document Type: Article

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