Advances in immersion related defectivity on XT:1250i at IMEC

Journal of Photopolymer Science and Technology

Volumn 19, Issue 5, 2006, Pages 585-591

  Maenhoudt, M ^a   Kocsis, M ^b   Stepanenko, N ^c   O'Brien, S ^d   Van Den Heuvel, D ^a   Vangoidsenhoven, D ^a   Gronheid, R ^a   Benndorf, M ^e   Nafus, K ^f   Fyen, W ^a   Kim, H W ^g   Kishimura, S ^h   Ronse, K ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d TEXAS INSTRUMENTS   (United States)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f TOKYO ELECTRON LTD   (Japan)

^g SAMSUNG Electronics   (South Korea)

^h PANASONIC CORPORATION   (Japan)

Author keywords

193nm immersion lithography; Defectivity; Resist; Scanner; Top coat

Indexed keywords

EID: 33748548350     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.585     Document Type: Article

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