Strain-driven modification of the Ge/Si growth mode in stacked layers: A way to produce Ge islands having equal size in all layers

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 43-48

  Le Thanh, Vinh ^a   Yam, V ^a   Boucaud, P ^a   Zheng, Y ^b   Bouchier, D ^a  

^a UNIV PARIS SUD   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY ELECTRON DIFFRACTION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

ELECTRONIC COUPLING; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0034227219     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00832-4     Document Type: Article

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