Modification of growth mode of Ge on Si by pulsed low-energy ion-beam irradiation

International Journal of Nanoscience

Volumn 3, Issue 1-2, 2004, Pages 19-27

  Dvurechenskii, A V ^a   Smagina, J V ^a   Zinovyev, V A ^a   Teys, S A ^a   Gutakovskii, A K ^a   Groetzschel, R ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ion assisted epitaxy; Nanoclusters; Self assembling

Indexed keywords

GROWTH (MATERIALS); HIGH ENERGY ELECTRON DIFFRACTION; ION BEAMS; IRRADIATION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SILICON;

ELECTRONIC DEVICES; HETEROEPITAXY; ION-ASSISTED EPITAXY; NANOCLUSTERS;

GERMANIUM;

EID: 13844312045     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219581X04001778     Document Type: Article

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