ZnO thin films with hole conduction produced by N+ ion implantation and oxygen-radical annealing

Russian Microelectronics

Volumn 33, Issue 3, 2004, Pages 165-168

  Georgobiani, A N ^a   Gruzintsev, A N ^b   Volkov, V T ^b   Vorob'ev, M O ^a   Dravin, V A ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; ION IMPLANTATION; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; ZINC COMPOUNDS;

FILM RESISTANCE; HOLE CONDUCTION; IMPLANTATION ENERGY; LUMINESCENCE SPECTRUM;

THIN FILMS;

EID: 3543109559     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:RUMI.0000026174.37727.e1     Document Type: Article

References (9)

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