DFT study on dissociative adsorption of SiH4 and GeH4 on SiGe(1 0 0)-2 × 1 surface

Surface Science

Volumn 600, Issue 16, 2006, Pages 3194-3201

  Cheng, Chia Liang ^a   Tsai, Dah Shyang ^a   Jiang, Jyh Chiang ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Adsorption kinetics; Density functional calculations; Germane; Silane; Surface chemical reaction

Indexed keywords

ADSORPTION; BUCKLING; DIMERS; DISSOCIATION; GERMANIUM COMPOUNDS; MONOLAYERS; PROBABILITY DENSITY FUNCTION; RATE CONSTANTS; SILANES; SILICON COMPOUNDS; SURFACE REACTIONS;

ADSORPTION KINETICS; DENSITY FUNCTIONAL CALCULATIONS; GERMANE; SURFACE CHEMICAL REACTION;

SILICON ALLOYS;

EID: 33748072758     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.06.011     Document Type: Article

References (38)

1. Hartmann J.M., Gallas B., Ferguson R., Fernandez J., Zhang J., and Harris J.J. Semicond. Sci. Technol. 15 (2000) 362
2. Grasby T.J., Whall T.E., and Parker E.H.C. Thin Solid Films 412 (2002) 44
3. Meyerson B.S. IBM J. Res. Develop. 44 (2000) 391
4. Zhang J., Woods N.J., Breton G., Price R.W., Hartell A.D., Lau G.S., Liu R., Wee A.T.S., and Tok E.S. Mater. Sci. Technol. B 89 (2002) 399
5. Meyerson B.S., Uram K.J., and LeGoues F.K. Appl. Phys. Lett. 53 (1988) 2555
6. Jang S.M., and Reif R. Appl. Phys. Lett. 59 (1991) 3162
7. Ning B.M.H., and Crowell J.E. Appl. Phys. Lett. 60 (1992) 2914
8. Mokler S.M., Ohtani N., Xie M.H., Zhang J., and Joyce B.A. Appl. Phys. Lett. 61 (1992) 2548
9. Kim K.J., Suemitsu M., Yamanaka M., and Miyamoto N. Appl. Phys. Lett. 62 (1993) 3461
10. Racanelli M., and Greve D.W. Appl. Phys. Lett. 56 (1990) 2524
11. Lam A.M., Zheng Y.J., and Engstrom J.R. Surf. Sci. 393 (1997) 205
12. Lam A.M., Zheng Y.J., and Engstrom J.R. Chem. Phys. Lett. 292 (1998) 229
13. Jasinski J.M., and Gates S.M. Acc. Chem. Res. 24 (1991) 9
14. Gates S.M., Greenlief C.M., Beach D.A., and Holbert P.A. J. Chem. Phys. 92 (1990) 3144
15. Gates S.M., and Kulkarni S.K. Appl. Phys. Lett. 58 (1991) 2963
16. Kang J.K., and Musgrave C.B. Phys. Rev. B 64 (2001) 245330-245331
17. Suemitsu M., Kim K.J., Nakazawa H., and Miyamoto N. Appl. Surf. Sci. 107 (1996) 81
18. Rauscher H. Surf. Sci. Rep. 42 (2001) 207
19. Brown A.R., and Doren D.J. J. Chem. Phys. 110 (1999) 2643
20. Potapov A.V., Orlov L.K., and Ivin S.V. Thin Solid Films 336 (1998) 191
21. Lin J.S., and Chou W.C. J. Mol. Struct. (Theochem) 635 (2003) 115
22. Lin J.S., and Lee L.F. Inter. J. Quantum Chem. 97 (2004) 736
23. Becke A.D. Phys. Rev. A 38 (1988) 3098
24. Lee C., Yang W., and Parr R.G. Phys. Rev. B 37 (1988) 785
25. Becke A.D. J. Chem. Phys. 98 (1993) 1372
26. Frisch M.J., et al. Gaussian 03 (2003), Gaussian, Inc., Pittsburgh, PA Revision A5
27. Jenkins S.J., and Srivastava G.P. Surf. Sci. 377-379 (1997) 887
28. Miwa R.H. Surf. Sci. 418 (1998) 55
29. Pathey L., Bullock E.L., Abukawa T., Kono S., and Johansson L.S.O. Phys. Rev. Lett. 75 (1995) 2538
30. Chen X., Saldin D.K., Bullock E.L., Patthey L., Johansson L.S.O., Tani J., Abukawa T., and Kono S. Phys. Rev. B 55 (1997) R7319
31. Takahasi M., Nakatani S., Ito Y., Takahasi T., Zhang X.W., and Ando M. Surf. Sci. 357-358 (1996) 78-81
32. Bullock E.L., Gunnella R., Patthey L., Abukawa T., Kono S., Natoli C.R., and Johansson L.S.O. Phys. Rev. Lett. 74 (1995) 2756
33. Cho J.H., and Kang M.H. Phys. Rev. B 49 (1994) 13670
34. Oyanagi H., Sakamoto K., Shioda R., Kuwahara Y., and Haga K. Phys. Rev. B 52 (1995) 5824
35. Frontes E., Patel J.R., and Comin F. Phys. Rev. Lett. 72 (1994) 1131
36. Hall M.A., Mui C., and Musgrave C.B. J. Phys. Chem. B 105 (2001) 12068
37. Hierlemann M., and Werner C. Mater. Sci. Semicond. Process. 3 (2000) 31
38. Cramer C.J. Essentials of Computational Chemistry (2002), Wiley, New York (Chapter 15)