The growth kinetics of Si1-xGex layers from SiH4 and GeH4

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 191-195

  Potapov, A V ^a   Orlov, L K ^a   Ivin, S V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

GeH4; Growth kinetics; Model; Numerical simulation; SiH4

Indexed keywords

COMPUTER SIMULATION; FILM GROWTH; HETEROJUNCTIONS; MATHEMATICAL MODELS; PRESSURE EFFECTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES;

SILICON GERMANIDE;

SEMICONDUCTING FILMS;

EID: 0032308960     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01236-X     Document Type: Article

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