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Volumn 377-379, Issue , 1997, Pages 887-890

Energetic evidence for mixed dimer growth on the Si(001)/Ge(2 × 1) surface

Author keywords

Density functional calculations; Diffusion and migration; Germanium; Growth; Low index single crystal surfaces; Silicon; Single crystal epitaxy

Indexed keywords

COMPUTATIONAL METHODS; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); MONOLAYERS; SILICON; SINGLE CRYSTALS; SURFACES;

EID: 0031124103     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01505-1     Document Type: Article
Times cited : (24)

References (15)
  • 3
    • 10644250257 scopus 로고
    • P. Hohenberg and W. Kohn, Phys. Rev. 136 (1964) B864; W. Kohn and L.J. Sham, Phys. Rev. 140 (1965) A1133.
    • (1964) Phys. Rev. , vol.136
    • Hohenberg, P.1    Kohn, W.2
  • 4
    • 0042113153 scopus 로고
    • P. Hohenberg and W. Kohn, Phys. Rev. 136 (1964) B864; W. Kohn and L.J. Sham, Phys. Rev. 140 (1965) A1133.
    • (1965) Phys. Rev. , vol.140
    • Kohn, W.1    Sham, L.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.