Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si(001)2×1

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 12, 1997, Pages R7319-R7322

  Chen, X ^a   Saldin, D ^a   Bullock, E ^b   Patthey, L ^b  

^a UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

^b UNIVERSITY OF LAUSANNE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000423595     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.R7319     Document Type: Article

References (14)

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