Density functional study of gas-surface reactivity: GeH4 dissociative adsorption onto semiconductor surfaces

Journal of Molecular Structure: THEOCHEM

Volumn 635, Issue 1-3, 2003, Pages 115-124

  Lin, Jyh Shing ^a   Chou, Wen Chi ^a  

^a TAMKANG UNIVERSITY   (Taiwan)

Author keywords

Density functional theory; Germane; Si(001) and Ge(001) surfaces; Ultrasoft pseudopotential

Indexed keywords

ADSORPTION; ARTICLE; CALCULATION; CHEMICAL REACTION KINETICS; DENSITY FUNCTIONAL THEORY; DENSITY GRADIENT; DIMERIZATION; DISSOCIATION; ENERGY; GAS ANALYSIS; MOLECULAR MODEL; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE MEASUREMENT; THEORETICAL MODEL; THERMAL ANALYSIS; ULTRASOFT PSEUDOPOTENTIAL TOTAL ENERGY CALCULATION; VIBRATION;

EID: 0042879395     PISSN: 01661280     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0166-1280(03)00406-8     Document Type: Article

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