Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 31-39

  Hierlemann, M ^a   Werner, C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Gas phase reactions; Kinetics; Quantum chemistry; SiGe heterolayers; Surface reactions

Indexed keywords

EID: 12444255468     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00007-X     Document Type: Article

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