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Volumn 107, Issue , 1996, Pages 81-84
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A model for the temperature-dependent adsorption kinetics of SiH 4 on Si(100)
a
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Author keywords
[No Author keywords available]
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Indexed keywords
DESORPTION;
GAS ADSORPTION;
HYDROGEN;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
REACTION KINETICS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SURFACE PHENOMENA;
THERMAL EFFECTS;
ADSORPTION PRECURSORS;
SILANES;
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EID: 0030566250
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(96)00489-8 Document Type: Article |
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Times cited : (9)
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References (4)
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