Study of the Si(001) clean surface structure using a six-circle surface X-ray diffractometer

Surface Science

Volumn 357-358, Issue , 1996, Pages 78-81

  Takahasi, M ^a   Nakatani, S ^a   Ito, Y ^a   Takahashi, T ^a   Zhang, X W ^b   Ando, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

Low index single crystal surfaces; Silicon; Surface relaxation and reconstruction; X ray scattering, diffraction, and reflection

Indexed keywords

CHARACTERIZATION; DIFFRACTOMETERS; MODEL STRUCTURES; MOLECULAR BEAM EPITAXY; REFLECTION; RELAXATION PROCESSES; SILICON; SINGLE CRYSTALS; SURFACE MEASUREMENT; SURFACE TREATMENT; THREE DIMENSIONAL; X RAY DIFFRACTION ANALYSIS;

ASYMMETRIC DIMER MODEL; BOND LENGTH; BUCKLING ANGLE; FRACTIONAL ORDER RECIPROCAL RODS; LOW INDEX SINGLE CRYSTAL SURFACES; X RAY REFLECTION; X RAY SCATTERING;

SURFACE STRUCTURE;

EID: 0002945016     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00062-3     Document Type: Article

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