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Volumn 6, Issue 1, 2006, Pages 28-35
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A silicon-based, sequential coat-and-etch process to fabricate nearly perfect substrate surfaces
a a a a a b b b c c |
Author keywords
Defect; Extreme Ultraviolet Lithography; Mask; Reticle; Smoothing
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Indexed keywords
ION BEAMS;
LITHOGRAPHY;
SILICON;
SUBSTRATES;
SURFACE ROUGHNESS;
THIN FILMS;
EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);
RETICLE;
SUBSTRATE SURFACES;
NANOSTRUCTURED MATERIALS;
NANOMATERIAL;
SILICON DIOXIDE;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
ELECTROCHEMISTRY;
ELECTRON MICROSCOPY;
METHODOLOGY;
NANOTECHNOLOGY;
SURFACE PROPERTY;
ULTRAVIOLET RADIATION;
ELECTROCHEMISTRY;
MICROSCOPY, ATOMIC FORCE;
MICROSCOPY, ELECTRON;
NANOSTRUCTURES;
NANOTECHNOLOGY;
SILICON DIOXIDE;
SURFACE PROPERTIES;
ULTRAVIOLET RAYS;
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EID: 33744721049
PISSN: 15334880
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (19)
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References (16)
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