메뉴 건너뛰기




Volumn 4562 I, Issue , 2001, Pages 288-296

Enhanced optical inspectability of patterned EUVL mask

Author keywords

EUV lithography; EUVL mask; Image contrast; Mask inspection; Multilayer blank; Surface treatment

Indexed keywords

DEFECTS; FABRICATION; IMAGE ANALYSIS; LIGHT ABSORPTION; LIGHT REFLECTION; MULTILAYERS; PHOTOLITHOGRAPHY; SURFACE TREATMENT; ULTRAVIOLET RADIATION;

EID: 0035765795     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.458303     Document Type: Conference Paper
Times cited : (34)

References (14)
  • 2
    • 0010819747 scopus 로고    scopus 로고
    • Specification for extreme ultraviolet lithography mask substrates
    • SEMI Draft Standard 3148, "Specification for Extreme Ultraviolet Lithography Mask Substrates".
    • SEMI Draft Standard , vol.3148
  • 4
    • 0010820561 scopus 로고    scopus 로고
    • Photomask Japan conference
    • P. Yan, et al., Photomask Japan Conference 2000, SPIE Proc., 4066).
    • (2000) SPIE Proc. , vol.4066
    • Yan, P.1
  • 13
    • 0010936691 scopus 로고    scopus 로고
    • Some of the results will be presented in Microlithography 2002.
    • (2002) Microlithography
  • 14
    • 0010821555 scopus 로고    scopus 로고
    • Private communications with Dr. D. Pettibone of KLA-Tencor
    • Private communications with Dr. D. Pettibone of KLA-Tencor.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.