Growth of ZnO thin films on c-plane Al 2 O 3 by molecular beam epitaxy using ozone as an oxygen source

Applied Surface Science

Volumn 252, Issue 20, 2006, Pages 7442-7448

  Heo, Y W ^a   Ip, K ^a   Pearton, S J ^a   Norton, D P ^a   Budai, J D ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Molecular beam epitaxy; Oxides; Semiconductors; Zinc oxide

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION;

EPITAXIAL FILM GROWTH; HALL MEASUREMENTS; OXYGEN SOURCES; OZONE FLUX;

ZINC OXIDE;

EID: 33747301261     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.08.094     Document Type: Article

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