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Volumn 248, Issue , 2003, Pages 83-86

Effect of oxygen source and buffer layer on crystal structure and electric properties of ZnO films grown by pulsed laser deposition

(6) Adachi, Yutaka a Ryouken, Haruki b Sakaguchi, Isao a Ohashi, Naoki a Haneda, Hajime a Takenaka, Tadashi b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

AFM; Hall measurement; Nitrogen dioxide; Pulsed laser deposition; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC PROPERTIES; FILM GROWTH; MORPHOLOGY; NITROGEN OXIDES; PULSED LASER DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS;

BUFFER LAYER; CRYSTALLINITY; OXIDIZING AGENTS;

ZINC OXIDE;

EID: 0041864062 PISSN: 10139826 EISSN: 16629795 Source Type: Book Series
DOI: None Document Type: Article

Times cited : (5)

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