Study of 6H-SiC high voltage bipolar diodes under reverse biases

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 477-482

  Isoird, K ^a   Lazar, M ^a   Ottaviani, L ^a   Locatelli, M L ^a   Raynaud, C ^a   Planson, D ^a   Chante, J P ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

6H SiC; Bipolar diodes; Breakdown voltage; JTE; OBIC

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; PHOTOCURRENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HIGH VOLTAGE BIPOLAR DIODES;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0035852254     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00537-2     Document Type: Article

References (7)