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Volumn 16, Issue 2, 2004, Pages

Electron-beam-induced current study of electrically active defects in 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAMERAS; CATHODOLUMINESCENCE; CHARGE COUPLED DEVICES; CRYSTAL DEFECTS; DIFFUSION; ELECTRIC POTENTIAL; ELECTRON BEAMS; HYDROGEN; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

EID: 1042266158     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/026     Document Type: Conference Paper
Times cited : (16)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.