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Volumn 16, Issue 2, 2004, Pages
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Electron-beam-induced current study of electrically active defects in 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CAMERAS;
CATHODOLUMINESCENCE;
CHARGE COUPLED DEVICES;
CRYSTAL DEFECTS;
DIFFUSION;
ELECTRIC POTENTIAL;
ELECTRON BEAMS;
HYDROGEN;
IMAGE ANALYSIS;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
ELECTRON BEAM INDUCED CURRENT (EBIC);
SECONDARY ELECTRONS (SE);
SILICON CARBIDE;
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EID: 1042266158
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/16/2/026 Document Type: Conference Paper |
Times cited : (16)
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References (20)
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