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Volumn 6, Issue 10, 1997, Pages 1396-1399

OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments

Author keywords

6H SiC; OBIC; Schottky contacts; Surface pretreatment

Indexed keywords


EID: 0000451171     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00111-8     Document Type: Article
Times cited : (5)

References (5)
  • 2
    • 0041889545 scopus 로고    scopus 로고
    • Silicon Carbide and Related Materials 1995, Kyoto, Japan, S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Inst. Phys. Conf. Ser. No. 142, Bristol and Philadelphia
    • K. Rottner, S. Savage, J. Andre, L. Ramberg, M. Frischholz, R. Helbig, in Silicon Carbide and Related Materials 1995, Proc. 6th Int. Conf. on Silicon Carbide and Related Materials 1995, Kyoto, Japan, S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Inst. Phys. Conf. Ser. No. 142, Bristol and Philadelphia, 1996, p. 721.
    • (1996) Proc. 6th Int. Conf. on Silicon Carbide and Related Materials 1995 , pp. 721
    • Rottner, K.1    Savage, S.2    Andre, J.3    Ramberg, L.4    Frischholz, M.5    Helbig, R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.