Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 277-280

  Vouroutzis, N ^b   Syvajarvi M ^a   Stoemenos, J ^b   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Extended Defects; Micropipes

Indexed keywords

AMORPHIZATION; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR STRUCTURE; OPTICAL MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SHALLOW TRENCHES;

SILICON CARBIDE;

EID: 0242496999     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.277     Document Type: Conference Paper

References (4)

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2. I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi. Jpn. J. Appl. Phys. 39 (2000), p. 6496.
3. M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M.F. MacMillan, A. Henry, Q. Wahab, and E. Janzén, J. Crystal Growth 197 (1999), p 155.
4. I. Kamata, H. Tsuchida, T. Jikimoto, T. Miyanagi and K. Izumi. This conference paper weP3-O4.