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Volumn 389-393, Issue 1, 2002, Pages 395-398
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Behavior of micropipes during growth in 4H-SiC
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Author keywords
Micropipes; Partial dislocations; Stacking faults
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
STACKING FAULTS;
SYNCHROTRONS;
TOPOGRAPHY;
TRANSMISSION ELECTRON MICROSCOPY;
TRENCHING;
X RAY ANALYSIS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
MICROPIPES;
PARTIAL DISLOCATIONS;
SYNCHROTRON X-RAY TOPOGRAPHY;
TRENCHES;
GROWTH STEPS;
SIC EPITAXIES;
SYNCHROTRON X-RAY TOPOGRAPHIES;
SILICON CARBIDE;
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EID: 0011213726
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.395 Document Type: Article |
Times cited : (10)
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References (7)
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