Relaxation of process induced surface stress in amorphous silicon carbide thin films using low energy ion bombardment

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Argyrakis, P ^a   McNabb, P ^a   Snell, A J ^a   Cheung, R ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; INDUCTIVELY COUPLED PLASMA; INTERFEROMETRY; ION BOMBARDMENT; RELAXATION PROCESSES; SILICON CARBIDE; STRESSES;

DEFLECTION PROFILES; LIGHT INTERFEROMETRY; PLASMA EXPOSURE; STRESS GRADIENT;

THIN FILMS;

EID: 33746443344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2222318     Document Type: Article

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